Rising Speed Limits for Fluxons via Edge-Quality Improvement in Wide MoSi Thin Films

نویسندگان

چکیده

Ultrafast vortex motion has recently become a subject of extensive investigations, triggered by the fundamental question regarding ultimate speed limits for magnetic flux quanta and enhancements single-photon detectors. In this regard, current-biased quench dynamic flux-flow regime---flux-flow instability (FFI)---has turned into widely used method extraction information about relaxation quasiparticles (unpaired electrons) in superconductor. However, large times ${\ensuremath{\tau}}_{ϵ}$ deduced from FFI many superconductors are often inconsistent with fast processes implied their counting capability. Here, we investigate $15$-nm-thick $182$-$\ensuremath{\mu}\mathrm{m}$-wide MoSi strips rough smooth edges produced laser etching milling focused ion beam. For strip deduce, current-voltage ($I$-$V$) curve measurements, factor 3 larger critical currents ${I}_{c}$, 20 higher maximal velocities km/s, shorter ${\ensuremath{\tau}}_{ϵ}$. We argue that deduction intrinsic material $I$-$V$ curves, utmost care should be taken edge sample quality such is justified only if field dependence ${I}_{c}$ points to dominating pinning vortices.

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

application of upfc based on svpwm for power quality improvement

در سالهای اخیر،اختلالات کیفیت توان مهمترین موضوع می باشد که محققان زیادی را برای پیدا کردن راه حلی برای حل آن علاقه مند ساخته است.امروزه کیفیت توان در سیستم قدرت برای مراکز صنعتی،تجاری وکاربردهای بیمارستانی مسئله مهمی می باشد.مشکل ولتاژمثل شرایط افت ولتاژواضافه جریان ناشی از اتصال کوتاه مدار یا وقوع خطا در سیستم بیشتر مورد توجه می باشد. برای مطالعه افت ولتاژ واضافه جریان،محققان زیادی کار کرده ...

15 صفحه اول

Hexahedral mesh quality improvement via edge-angle optimization

Supplementary Material 1 Our method can successfully optimize over 50 octree-based 2 meshes, The results are showed in the following tables. 3 Table 1. Improving Quality of hex-meshes Octree-based method. We use metro tools to compute Hausdorff distance wrt. bounding box diagonal [1]. For each model, the first and second row is input and output, respectively. Model #hexes Err MSJ ASJ airplane1 ...

متن کامل

Simulation of Fabrication toward High Quality Thin Films for Robotic Applications by Ionized Cluster Beam Deposition

The most commonly used method for the production of thin films is based on deposition of atoms or molecules onto a solid surface. One of the suitable method is to produce high quality metallic, semiconductor and organic thin film is Ionized cluster beam deposition (ICBD), which are used in electronic, robotic, optical, optoelectronic devices. Many important factors such as cluster size, cluster...

متن کامل

Edge tunneling of vortices in superconducting thin films.

We investigate the phenomenon of the decay of a supercurrent due to the zero-temperature quantum tunneling of vortices from the edge in a thin superconducting film in the absence of an external magnetic field. An explicit formula is derived for the tunneling rate of vortices, which are subject to the Magnus force induced by the supercurrent, through the Coulomb-like potential barrier binding th...

متن کامل

Continuum limits of discrete thin films with superlinear growth densities

the analog theories for ‘continuous’ thin films showing that general compactness and homogenization results can be proven by adapting the techniques commonly used for problems on Sobolev spaces; on the other hand we show that new phenomena arise due to the different nature of the microscopic interactions, and in particular that for long-range interactions a surface energy on the free surfaces o...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Physical review applied

سال: 2022

ISSN: ['2331-7043', '2331-7019']

DOI: https://doi.org/10.1103/physrevapplied.17.034072